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SST31LF021-70-4E-WH データシートの表示(PDF) - Silicon Storage Technology

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SST31LF021-70-4E-WH
SST
Silicon Storage Technology SST
SST31LF021-70-4E-WH Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
EOL Data Sheet
Product Identification
The Product Identification mode identifies the devices as
either SST31LF021 or SST31LF021E and the manufac-
turer as SST. This mode may be accessed by hardware or
software operations. The hardware device ID Read opera-
tion is typically used by a programmer to identify the correct
algorithm for the SST31LF021/021E flash memory banks.
Users may wish to use the software Product Identification
operation to identify the part (i.e., using the device ID) when
using multiple manufacturers in the same socket. For
details, see Table 3 for hardware operation or Table 4 for
software operation, Figure 11 for the software ID entry and
read timing diagram and Figure 18 for the ID entry com-
mand sequence flowchart.
TABLE 1: PRODUCT IDENTIFICATION
Manufacturer’s ID
Device ID
SST31LF021
SST31LF021E
Address
0000H
0001H
0001H
Data
BFH
18H
19H
T1.4 1137
Product Identification Mode Exit/Reset
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exiting is
accomplished by issuing the Exit ID command sequence,
which returns the device to the Read operation. Please
note that the software reset command is ignored during an
internal Program or Erase operation. See Table 4 for soft-
ware command codes, Figure 12 for timing waveform and
Figure 18 for a flowchart.
Design Considerations
SST recommends a high frequency 0.1 µF ceramic capac-
itor to be placed as close as possible between VDD and
VSS, e.g., less than 1 cm away from the VDD pin of the
device. Additionally, a low frequency 4.7 µF electrolytic
capacitor from VDD to VSS should be placed within 1 cm of
the VDD pin.
©2007 Silicon Storage Technology, Inc.
5
S71137-06-EOL
05/07

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