1014-2 データシートの表示（PDF） - GHz Technology

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1014-2

2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz

GHz Technology 

1014 - 2

2 Watt - 28 Volts, Class C

Microwave 1000 - 1400 MHz

GENERAL DESCRIPTION

The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of

Class C, RF Output Power over the band 1000-1400 MHz. This transistor is

designed for Microwave Broadband Class C amplifier applications. It includes

Input prematching and utilizes gold metalization and diffused ballasting to

provide high reliagility and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25oC

9.7 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage

BVebo Emitter to Base Voltage

Ic

Collector Current

50 Volts

3.5 Volts

0.5 A

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to +150oC

+200oC

CASE OUTLINE

55LT, STYLE 1

ELECTRICAL CHARACTERISTICS @ 25 OC

SYMBOL CHARACTERISTICS

TEST CONDITIONS

Pout

Pin

Pg

ηc

VSWR1

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F =1000-1400 MHz

Vcb = 28 Volts

As Above

Pout = 2 Watts

MIN

2

7.5

TYP

45

MAX UNITS

Watt

0.35 Watt

dB

%

10:1

BVces

BVebo

Icbo

hFE

Cob

θjc

Collector to Emitter Breakdown Ic = 20 mA

50

Emitter to Base Breakdown

Ie = 5 mA

3.5

Collector to Base Current

Vcb = 28 Volts

Current Gain

Vce = 28 V, Ic = 100 mA

10

Output Capacitance

Thermal Resistance

Vcb = 25 V, f = 1 MHz

Tc = 25oC

Volts

Volts

0.5

mA

100

4.5

pF

18

oC/W

Rev A, Feb 1997

Ghz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT

THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Ghz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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