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1N5396GP データシートの表示(PDF) - General Semiconductor

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1N5396GP
GE
General Semiconductor GE
1N5396GP Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N5391GP THRU 1N5399GP
FIG. 1 - FORWARD CURRENT DERATING CURVE
2.0
TL, LEAD
TEMPERATURE
60 HZ
RESISTIVE OR
1.0
INDUCTIVE LOAD
TA, AMBIENT
TEMPERATURE
0.5
0.375" (9.5mm) LEAD LENGTH
0
0 25 50 75 100 125 150 175
TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
40
30
20
10
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
10
TJ=125°C
1
TJ=75°C
0.1
0.01
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
1
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec

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