1N5400GP データシートの表示（PDF） - Shanghai Lunsure Electronic Tech
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1N5400GP Datasheet PDF : 3 Pages
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
1N5400GP
THRU
1N5408GP
Features
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Forward Voltage
• High Current Capability
• Glass Passivated Junction
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 30 °C/W Junction To Lead
Catalog
Number
Device
Marking
1N5400GP
---
1N5401GP
---
1N5402GP
---
1N5404GP
---
1N5406GP
---
1N5407GP
---
1N5408GP
---
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
35V
70V
140V
280V
420V
560V
700V
50V
100V
200V
400V
600V
800V
1000V
3 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-201AD
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
3.0A TA = 105°C
Peak Forward Surge
IFSM
Current
200A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF
1.1V IFM = 3.0A;
TJ = 25°C*
Reverse Current At
IR
5.0µA TJ = 25°C
Rated DC Blocking
50µA TJ = 125°C
Voltage
Typical Junction
Capacitance
CJ
40pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 µsec, Duty cycle 1%
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.370
B
---
.250
C
.048
.052
D
1.000
---
MM
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
www.cnelectr .com
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