1N5811U(2015) データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
1N5811U Datasheet PDF : 9 Pages
| |||
1N5811U
Characteristics
Symbol
Parameter
Table 5. Dynamic characteristics
Test conditions
Min. Typ. Max. Unit
tRR Reverse recovery time
IF = IR = 0.5 A, Irr = 0.1 A, dI/dt = -100 A/µs (min.) -
IF = 1 A, VR = 30 V, dI/dt = -50 A/µs,
-
VFP Forward recovery voltage IFM = 500 mA
-
tFR Forward recovery time IFM = 500 mA, VRF = 1.1 x VF
-
Cj Diode capacitance
VR = 10 V, F = 1 MHz
-
- 30
ns
- 35
- 2.2 V
- 15 ns
- 60 pF
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward
current (typical values)
current (maximum values)
IFM(A)
20
IFM(A)
20
18
18
16
16
14
14
12
12
10
Tj=125 °C
8
10
Tj=125 °C
8
6
Tj=-65 °C
6
4
Tj=25 °C
4
Tj=25 °C
Tj=-65 °C
2
VFM(V)
2
VFM(V)
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration
IR(µA)
1.E+01
1.E+00
Tj=125 °C
Zth(j-c)/Rth(j-c)
1.0
LCC2B
0.9
0.8
0.7
1.E-01
1.E-02
1.E-03
0
0.6
Tj=75 °C
0.5
0.4
0.3 Single pulse
0.2
Tj= 25 °C
0.1
VR(V)
0.0
tP(s)
20
40
60
80
100 120 140 160
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00 1.E+01
DocID16005 Rev 4
3/9
9
Share Link: 