1N5811US データシートの表示（PDF） - Electronics Industry
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1N5811US Datasheet PDF : 2 Pages
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Certificate : TH97/10561QM
Certificate : TW00/17276EM
1N5807US - 1N5811US
PRV : 50 - 150 Volts
Io : 6.0 Amperes
ULTRAFAST RECOVERY
RECTIFIER DIODES
SMB (DO-214AA)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ultrafast recovery time
* Pb / RoHS Free
1.1 ± 0.3
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100µA
Maximum Average Forward Current
Maximum Forward Surge Current (3)
Maximum Peak Forward Voltage at IF = 4.0 A.
Maximum Reverse Current at VRWM
Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time (4)
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRWM
VBR(Min)
IF(AV)
IFSM
VF
IR
IR(H)
Trr
RӨJL
TJ
TSTG
1N5807US 1N5809US 1N5811US
50
100
150
60
110
160
6.0 (1)
3.0 (2)
125
0.875
5.0
150
30
22
- 65 to + 175
- 65 to + 175
UNIT
V
V
A
A
V
μA
ns
°C/W
°C
°C
Notes :
(1) Rated at TL=75 °C at 3/8 inc lead length. Derate at 60 mA/°C for TL above 75 °C.
(2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where TJ(max) dose not exceed 175 °C.
(3) Ta = 25 °C @ IF(AV) = 3A and VRWM for ten 8.3 ms surges at 1 minute intervals.
(4) IF = 1A, IRM = 1A, IR(REC) = 0.1 A and di/dt = 10 A/μs min.
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Rev. 00 : April 4, 2007
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