ATF-45171 データシートの表示（PDF） - HP => Agilent Technologies

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ATF-45171

2–8 GHz Medium Power Gallium Arsenide FET

HP => Agilent Technologies 

ATF-45171 Absolute Maximum Ratings

Symbol

VDS

VGS

VGD

IDS

PT

TCH

TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Gate-Drain Voltage

Drain Current

Power Dissipation [2,3]

Channel Temperature

Storage Temperature

Units

V

V

V

mA

W

°C

°C

Absolute

Maximum[1]

+14

-7

-16

IDSS

3.6

175

-65 to +175

Thermal Resistance:

Liquid Crystal Measurement:

θjc = 42°C/W; TCH = 150°C

1␣ µm Spot Size[4]

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. TCASE TEMPERATURE = 25°C.

3. Derate at 24 mW/°C for

TCASE > 24°C.

4. The small spot size of this tech-

nique results in a higher, though

more accurate determination of θjc

than do alternate methods. See

MEASUREMENTS section for

more information.

ATF-45171 Typical Performance, TA = 25°C

30

20

35

P1 dB

29

30

15

25

20

40

28

10

15

30

G1 dB

27

5

10

20

5

10

26

2.0

0

4.0

6.0 8.0 10.0 12.0

FREQUENCY (GHz)

Figure 1. Power Output @ 1 dB Gain

Compression and 1 dB Compressed

Gain vs. Frequency.

VDS = 9V, IDS = 250 mA.

0

0

0 5 10 15 20 25 30

PIN (dBm)

Figure 2. Output Power and Power

Added Efficiency vs. Input Power.

VDS = 9 V, IDS = 250 mA, f = 4.0 GHz.

25

20

MSG

15

10

5

|S21|2

MAG

MSG

0

1.0

2.0

4.0 6.0 10.0 14.0

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,

Maximum Available Gain and

Maximum Stable Gain vs. Frequency.

VDS = 9 V, IDS = 250 mA.

5-96

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