1N65A(2011) データシートの表示（PDF） - Unisonic Technologies

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1N65A
(Rev.:2011)

0.5A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N65A

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 2)

Avalanche Energy

Single Pulse(Note 3)

Repetitive(Note 2)

Peak Diode Recovery dv/dt (Note 4)

VDSS

VGSS

ID

IDM

EAS

EAR

dv/dt

650

±30

0.5

2

50

3.6

4.0

4.5

V

V

A

A

mJ

mJ

V/ns

Power Dissipation (TC=25°C)

Derate above 25°C

3

W

PD

25

mW/°C

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C

4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

SYMBOL

θJA

RATINGS

120

UNIT

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-584.B

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