1N6690US データシートの表示（PDF） - Solid State Devices, Inc.
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1N6690US Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
1N66 __ __ __
⏐ ⏐ L Screening2/ = None
⏐⏐
⏐⏐
⏐⏐
TX = TX Level
TXV = TXV Level
S = S Level
⏐ L Package ____ = Axial
⏐
SMS = Surface Mount Square Tab
L Voltage
90 = 600 V
91 = 800 V
92 = 1000 V
93 = 1200 V
1N6690-1N6693
and
1N6690US-1N6693US
20 AMP
600-1200 Volts
75 nsec
ULTRA FAST RECTIFIER
Features:
• Replaces DO-4 and DO-5
• Ultra Fast Recovery
• PIV to 1200 Volts
• Low Reverse Leakage
• Hermetically Sealed Void-Free Construction3/
• Monolithic Single Chip Construction
• High Surge Rating
• Low Thermal Resistance
• Available in Surface Mount Versions (-US Suffix) and in
Button Tab Mounting (See Data Sheet RU0129).
• TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Symbol
Peak Repetitive Reverse and
DC Blocking Voltage
1N6690 & 1N6690US
1N6691 & 1N6691US
1N6692 & 1N6692US
1N6693 & 1N6693US
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 100ºC)
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8 "
Junction to End Tab
VRRM
VRWM
VR
Io
IFSM
Top & Tstg
RθJL
RθJE
Value
600
800
1000
1200
20
375
-65 to +175
3.0
2.5
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Specifics Available on Request.
3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500.
Axial Leaded
SMS
Units
Volts
Amps
Amps
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC
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