CXA3541N データシートの表示（PDF） - Sony Semiconductor

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CXA3541N

2-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive

Sony Semiconductor 

CXA3541N

Electrical Characteristics

(Unless otherwise specified; VCC = 5V, VEE = –3V, Ta = 25°C, CAP = 0.1µF, RS = 7.5kΩ)

No.

Item

Symbol

Measurement conditions

Min. Typ. Max. Unit

Power Dissipation IW = 29.5mA, IB = 5.9mA

1-1

ISP1

Sleep mode

2.15 2.85 mA

1-2

IID1

VCC power supply current

1-3

IRE1

Idle mode

Read mode

22 29 mA

37 48 mA

1-4

IWR1

Write mode

98 130 mA

1-5

IID2

Idle mode

10 13 mA

1-7 VEE power supply current IRE2

Read mode

10 13 mA

1-8

IWR2

Write mode

10 13 mA

1-9 Bank write mode

ICCBW

ICCBW = 17 + 17 × N + IW × N

IW = 29.5mA

111

mA

Digital Inputs

2-1

TTL input

low input voltage

2-2

TTL input

high input voltage

VIL

TTL input; R/XW

Internal pull-up resistor

VIH

0

0.8 V

2.0

VCC

+ 0.3

V

2-3

TTL input

input current

ITTL

High voltage: 5V

Low voltage: 0V

–200

200 µA

2-4

Serial interface input

low input voltage

2-5

Serial interface input

high input voltage

VSIL

Serial input;

SDATA, SCLK, SDEN

VSIH

0.8 V

2.35

V

2-6

Serial interface input

input current

VST

High voltage: 3.3V

Low voltage: 0V

Pull-down resistor: 14kΩ

–500

500 µA

3-1 P-ECL common voltage VPC

(VH + VL)/2

1.55

VCC

V

3-2 P-ECL differential voltage VPD

(VH – VL)

0.2

1.5 V

3-3 P-ECL high voltage

VPH

VCC

V

3-4 P-ECL input current

IWD

Input voltage: 4V

–20

20 µA

Power Dissipation IW = 29.5mA, IB = 5.9mA

4-1 Bank write enable voltage VSEH

VCC

+ 1.2

VCC

+ 1.4

V

4-2 Bank write enable current ISEH

6

14 mA

5-1 FLT output low voltage VFLTL

Open collector output

External resistance = 2.4kΩ

0.8 V

5-2 FLT output high voltage VFLTH

Open collector output

External resistance = 2.4kΩ

4.5

V

6 BHV gain accuracy

EBHV

VBHV = VCC – 4 × IB × (RMR + 5.5Ω)

IB = "111", RMR = 50Ω

–8

8

%

–6–

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