1PS70SB20 データシートの表示（PDF） - Philips Electronics
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1PS70SB20 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
Product specification
1PS70SB20
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
IF = 500 mA; see Fig.2
VR = 35 V; see Fig.3
VR = 35 V; Tj = 100 °C; see Fig.3;
note 1
f = 1 MHz; VR = 0; see Fig.4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
MIN.
−
−
−
MAX.
550
100
10
UNIT
mV
µA
mA
60
90
pF
VALUE
500
UNIT
K/W
2001 Mar 16
3
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