28F002BC データシートの表示（PDF） - Intel
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28F002BC Datasheet PDF : 37 Pages
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28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
Table 7. DC Characteristics (Continued)
Symbol
Parameter
Notes Min Typ Max Units Test Conditions
IRP#
RP# Boot Block Unlock
Current
IID
A9 Intelligent Identifier
Current
VID
A9 Intelligent Identifier
Voltage
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
VPPLK
VPPH
VPPH
VLKO
VHH
VPP Lock-Out Voltage
VPP (Program/
Erase Operations)
VPP (Program/
Erase Operations)
VCC Erase/Write Lock
Voltage
RP# Unlock Voltage
1,4
500
µA RP# = VHH
1,4
500
µA A9 = VID
10.8
13.2
V
-0.5
0.8
V
2.0
VCC +
V
0.5V
0.45
V VCC = VCC Min
IOL = 5.8 mA
2.4
V VCC = VCC Min
IOH = –2.5 mA
0.85
VCC
V VCC = VCC Min
IOH = –1.5 mA
VCC –
0.4V
VCC = VCC Min
IOH = –100 µA
3
0.0
6.5
V Complete Write
Protection
7
11.4 12.0 12.6
V
8
10.8 12.0 13.2
V
2.0
V
8
10.8 12.0 13.2
V Boot Block Unlock
Voltage
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, VPP =12.0V , T = +25°C. These currents are
valid for all product versions (packages and speeds).
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases and byte writes are inhibited when VPP = VPPLK, and not guaranteed in the range between VPPH and VPPLK.
4. Sampled, not 100% tested.
5. CMOS Inputs are either VCC ± 0.2V or GND ± 0.2V. TTL Inputs are either VIL or VIH.
6. VCC = 12.0V ± 10% for applications requiring 100,000 block erase cycles.
7. VPP = 12.0V ± 5% for applications requiring 100,000 block erase cycles.
8. VPP = 12.0V ± 10% for applications requiring wider VPP tolerances: Parameter blocks can sustain 10,000 block erase
cycles; main blocks support up to 100 block erase cycles. Note that erase times are close to maximum spec limits when
using this option.
28
PRELIMINARY
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