28F002BL-B150 データシートの表示（PDF） - Intel
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28F002BL-B150 Datasheet PDF : 42 Pages
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28F200BL-T B 28F002BL-T B
Program and Erase Automation allow program
and erase operations to be executed using a two-
write command sequence to the CUI The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations including verifications there-
by unburdening the microprocessor or microcontrol-
ler Writing of memory data is performed in word or
byte increments for the 28F200BL family and in byte
increments for the 28F002BL family typically within
11 ms
The Status Register (SR) indicates the status of the
WSM and whether the WSM successfully completed
the desired program or erase operation
Maximum Access Time of 150 ns (tACC) is achieved
over the commercial temperature range (0 C to
a70 C) over VCC supply voltage range (3 0V to
3 6V 4 5V to 5 5V) and 50 pF output load
IPP Program current is 40 mA for x16 operation
and 30 mA for x8 operation IPP Erase current is
30 mA maximum VPP erase and programming
voltage is 11 4V to 12 6V (VPP e 12V g5%) un-
der all operating conditions
Typical ICC Active Current of 15 mA is achieved
for the x16 products and the x8 products
The 2-Mbit flash family is also designed with an Au-
tomatic Power Savings (APS) feature to minimize
system battery current drain and allow for extremely
low power designs Once the device is accessed to
read the array data APS mode will immediately put
the memory in static mode of operation where ICC
active current is typically 0 8 mA until the next read
is initiated
When the CE and RP pins are at VCC and the
BYTE pin (28F200BL-only) is at either VCC or GND
the CMOS Standby mode is enabled where ICC is
typically 40 mA
A Deep Power-down Mode is enabled when the
RP pin is at ground minimizing power consumption
and providing write protection during power-up con-
ditions ICC current during deep power-down mode
is 0 20 mA typical An initial maximum access time
or Reset Time of 600 ns is required from RP
switching until outputs are valid Equivalently the
device has a maximum wake-up time of 1 ms until
writes to the Command User Interface are recog-
nized When RP is at ground the WSM is reset the
Status Register is cleared and the entire device is
protected from being written to This feature pre-
vents data corruption and protects the code stored
in the device during system reset The system Reset
pin can be tied to RP to reset the memory to nor-
mal read mode upon activation of the Reset pin
When the CPU enters reset mode it expects to read
the contents of a memory location Furthermore
with on-chip program erase automation in the
2-Mbit family and the RP functionality for data pro-
tection after the CPU is reset and even if a program
or erase command is issued the device will not rec-
ognize any operation until RP returns to its normal
state
For the 28F200BL Byte-wide or Word-wide In-
put Output Control is possible by controlling the
BYTE pin When the BYTE pin is at a logic low
the device is in the byte-wide mode (x8) and data is
read and written through DQ 0 7 During the byte-
wide mode DQ 8 14 are tri-stated and DQ15 Ab1
becomes the lowest order address pin When the
BYTE pin is at a logic high the device is in the
word-wide mode (x16) and data is read and written
through DQ 0 15
1 3 Applications
The 2-Mbit low power boot block flash memory fami-
ly combines high density 3V operation high per-
formance cost-effective flash memories with block-
ing and hardware protection capabilities Its flexibility
and versatility will reduce costs throughout the prod-
uct life cycle Flash memory is ideal for Just-In-Time
production flow reducing system inventory and
costs and eliminating component handling during
the production phase During the product life cycle
when code updates or feature enhancements be-
come necessary flash memory will reduce the up-
date costs by allowing either a user-performed code
change via floppy disk or a remote code change via
a serial link The 2-Mbit boot block flash memory
family provides full function blocked flash memories
suitable for a wide range of applications These ap-
plications include Extended PC BIOS Handy Digi-
tal Cellular Phone program and data storage and
various other portable embedded applications where
both program and data storage are required
Reprogrammable systems such as Notebook and
Palmtop computers are ideal applications for the
2-Mbit low power flash products Portable and han-
dheld personal computer applications are becoming
more complex with the addition of power manage-
ment software to take advantage of the latest micro-
processor technology the availability of ROM-based
application software pen tablet code for electronic
handwriting and diagnostic code Figure 1 shows an
example of a 28F200BL-T application
This increase in software sophistication augments
the probability that a code update will be required
after the PC is shipped The 2-Mbit low power flash
memory products provide an inexpensive update so-
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