1SS311 データシートの表示（PDF） - Toshiba

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1SS311

Diode Silicon Epitaxial Planar Type

Toshiba 

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS311

1SS311

High Voltage,High Speed Switching Applications

z Low forward voltage

: VF = 0.94V (typ.)

z High voltage

: VR = 400V (min)

z Fast reverse recovery time : trr = 1.5ns (typ.)

z Small total capacitance : CT = 3.2pF (typ.)

z Small package

: SC−59

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

VRM

420

V

Reverse voltage

VR

400

V

Maximum (peak) forward current

IFM

300

mA

Average forward current

Surge current (10ms)

Power dissipation

IO

IFSM

P

100

mA

2

A

150

mW

Junction temperature

Tj

125

°C

Storage temperature

Tstg

−55∼125

°C

JEDEC

EIAJ

―

SC−61

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

TOSHIBA

Weight: 0.012g

1−3G1B

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Total capacitance

Symbol

VF (1)

VF (2)

IR (1)

IR (2)

CT

Test

Circuit

Test Condition

― IF = 10mA

― IF = 100mA

― VR = 300V

― VR = 400V

― VR = 0, f = 1MHz

Reverse recovery time

trr

― IF = 10mA

Min Typ. Max Unit

― 0.80 ―

V

― 0.94 1.20

―

―

0.1

μA

―

―

1.0

―

3.2

5.0

pF

―

1.5

―

μs

Marking

1

2007-11-01

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