1SS315TPH3F データシートの表示（PDF） - Toshiba
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1SS315TPH3F Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS315
UHF Band Mixer Applications
1SS315
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
VRM
IF
Tj
Tstg
5
V
30
mA
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Forward current
Reverse current
Total capacitance
Symbol
VF
IF
IR
CT
Test Condition
IF = 2 mA
VF = 0.5 V
VR = 0.5 V
VR = 0.2 V, f = 1 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
⎯ 0.25 ⎯
V
30
⎯
⎯
mA
⎯
⎯
25
μA
⎯
0.6
⎯
pF
1
2007-11-01
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