1SS400G(2011) データシートの表示（PDF） - ROHM Semiconductor

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1SS400G
(Rev.:2011)

Switching Diode

ROHM Semiconductor 

Data Sheet

Switching Diode

1SS400G

Applications

High speed switching

Dimensions (Unit : mm)

0.6±0.05

0.13±0.03

Land size figure (Unit : mm)

0.5

Features

1)Ultra small mold type.（VMD2）

2)High reliability

Construction

Silicon epitaxial planer

0.27±0.03

0.5±0.05

VMD2

Structure

ROHM : VMD2

dot (year week factory)

Taping dimensions (Unit : mm)

4±0.1

2±0.05

φ1.5+0.1

　　　　　0

0.18±0.05

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Reverse voltage (repetitive peak) VRM

Reverse voltage (DC)

VR

Forward current (repetitive peak) IFM

Average rectified forward current

Io

Surge current (1S)

Isurge

Junction temperature

Tj

Storage temperature

Tstg

Electrical characteristics (Ta=25C)

Parameter

Symbol

Forward voltage

VF

Reverse current

IR

Capacitance between terminal

Ct

Reverse recovery time

Trr

0.76±0.1

Limits

90

80

225

100

500

150

55 to 150

4±0.1

Unit

V

V

mA

mA

mA

C

C

Min.

Typ.

Max.

Unit

-

-

1.2

V

-

-

100

nA

-

-

3.0

pF

-

-

4.0

ns

2±0.05

φ0.5

0.3

0.65±0.05

Conditions

IF=100mA

VR=80V

VR=0.5V f=1.0MHz

VR=6V IF=10mA RL＝100Ω

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© 2011 ROHM Co., Ltd. All rights reserved.

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2011.10 - Rev.A

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