1SV328 データシートの表示（PDF） - [Zhaoxingwei Electronics ., Ltd

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1SV328

Silicon Epitaxial Planar Diode

[Zhaoxingwei Electronics ., Ltd 

SMD Type

Silicon Epitaxial Planar Diode

1SV328

Diodes

Features

High Capacitance Ratio:C1V/C4V=2.8(Typ.)

Low Series Resistance:rs=0.55 (Typ.)

Useful for Small Size Tuner

SOD-323

1.7+0.1

-0.1

Unit: mm

0.85+0.05

-0.05

2.6+0.1

-0.1

0.475

0.375

1.0max

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Junction Temperature

Storage Temperature Range

Symbol

Value

Unit

VR

10

V

Tj

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

P aram eter

Reverse Voltage

Reverse Current

Capacitance

Capacitance Ratio

Series Resistance

Symbol

VR

IR

C1V

C4V

C1/C4V

rs

Conditions

IR = 1 A

VR = 10 V

f = 1 MHz;VR = 1 V

f = 1 MHz;VR = 4 V

VR = 1V, f = 470 MHz

Min

10

5.7

1.85

2.7

Typ

2.8

0.55

Max

3

6.7

2.45

0.7

Unit

V

nA

pF

Note

1.Signal level when capacitance is measured:Vsig = 100mVrms

Marking

Marking

V2

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