25LC010A データシートの表示（PDF） - Microchip Technology

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25LC010A

1K-4K SPI Serial EEPROM HighTemp Family Data Sheet

Microchip Technology 

25LCXXXA

3.6 Write Status Register Instruction

(WRSR)

The Write Status Register instruction (WRSR) allows the

user to write to the nonvolatile bits in the STATUS

register as shown in Table 3-2. The user is able to

select one of four levels of protection for the array by

writing to the appropriate bits in the STATUS register.

The array is divided up into four segments. The user

has the ability to write-protect none, one, two or all four

of the segments of the array. The partitioning is

controlled as shown in Table 3-3.

See Figure 3-6 for the WRSR timing sequence.

TABLE 3-3: ARRAY PROTECTION

BP1

BP0

0

0

0

1

1

0

1

1

Array Addresses

Write-Protected

None

Upper 1/4

Upper 1/2

All

Array Addresses

Unprotected

All

Lower 3/4

Lower 1/2

None

TABLE 3-4: ARRAY PROTECTED ADDRESS LOCATIONS

Density

Upper 1/4

Upper 1/2

1K

60h - 7Fh

40h - 7Fh

2K

C0h - FFh

80h - FFh

4K

180h - 1FFh

100h - 1FFh

All

00h - 7Fh

00h - FFh

000h - 1FFh

FIGURE 3-7:

WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)

CS

SCK

SI

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Instruction

Data to STATUS Register

0 00 00 0 01 7 6 54 3 2 10

High-Impedance

SO

Note: An internal write cycle (TWC) is initiated on the rising edge of CS after a valid write STATUS register

sequence.

© 2009 Microchip Technology Inc.

Preliminary

DS22136B-page 13

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