DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

28C010TRPDS20 データシートの表示(PDF) - MAXWELL TECHNOLOGIES

部品番号
コンポーネント説明
メーカー
28C010TRPDS20
Maxwell
MAXWELL TECHNOLOGIES Maxwell
28C010TRPDS20 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
1 Megabit (128K x 8-Bit) EEPROM
28C010T
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL
MIN
MAX
UNITS
Chip Enable Access Time
OE = VIL, WE = VIH
-120
-150
-200
tCE
ns
--
120
--
150
--
200
Output Enable Access Time
CE = VIL, WE = VIH
-120
-150
-200
tOE
ns
0
75
0
75
0
100
Output Hold to Address Change
CE = OE = VIL, WE = VIH
-120
-150
-200
Output Disable to High-Z 2
CE = VIL, WE = VIH
-120
-150
-200
CE = OE = VIL, WE = VIH
-120
-150
-200
RES to Output Delay3
CE = OE = VIL, WE = VIH
-120
-150
-200
tOH
ns
0
--
0
--
0
--
ns
tDF
0
50
0
50
0
60
tDFR
0
300
0
350
0
450
tRR
ns
--
400
--
450
--
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL
MIN 1
MAX
UNITS
Address Setup Time
-120
-150
-200
tAS
ns
0
--
0
--
0
--
1000582
12.19.01 Rev 8
All data sheets are subject to change without notice 4
©2001 Maxwell Technologies
All rights reserved.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]