MX29F1610MC-10C4 データシートの表示（PDF） - Macronix International

部品番号

コンポーネント説明

メーカー

MX29F1610MC-10C4

16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

Macronix International 

MX29F1610

SYMBOL TYPE

WP

INPUT

BYTE

INPUT

VCC

GND

NAME AND FUNCTION

WRITE PROTECT: Top or Bottom sector can be protected by writing a

non-volatile protect-bit for each sector. When WP is high, all sectors can

be programmed or erased regardless of the state of the protect-bits.

The WP input buffer is disabled when PWD transitions low (deep power-

down mode).

BYTE ENABLE: BYTE Low places device in x8 mode. All data is then

input or output on Q0-7 and Q8-14 float. AddressQ15/A-1 selects

between the high and low byte. BYTE high places the device in x16

mode, and turns off the Q15/A-1 input buffer. Address A0, then becomes

the lowest order address.

DEVICE POWER SUPPLY(5V ± 0%)

GROUND

BUS OPERATION

Flash memory reads, erases and writes in-system via the local CPU . All bus cycles to or from the flash memory

conform to standard microprocessor bus cycles.

Table 2.1 Bus Operations for Word-Wide Mode (BYTE = VIH)

Mode

Notes PWD CE1 CE2 OE

Read

1, 2, 7 VIH VIL VIL VIL

Output Disable 1, 6, 7 VIH VIL VIL VIH

Standby

1, 6, 7 VIH VIL VIH X

VIH VIL

VIH VIH

Deep Power-Down 1, 3 VIL X

X

X

Manufacturer ID 4, 8 VIH VIL VIL VIL

Device ID

4, 8 VIH VIL VIL VIL

Write

1, 5, 6 VIH VIL VIL VIH

WE A0 A1 A9 Q0-Q7 Q8-Q14 Q15/A-1 RY/BY

VIH X X X DOUT DOUT DOUT X

VIH X

X

X

High Z High Z HighZ

X

X

X

X

X

High Z HIgh Z HighZ

X

X X X X High Z High Z

VIH VIL VIL VID C2H

00H

VIH VIH VIL VID F1H

00H

VIL X X X DIN

DIN

HighZ

0B

0B

DIN

VOH

VOH

VOH

X

P/N:PM0260

5

This Material Copyrighted by Its Respective Manufacturer

REV. 2.3, APR. 16, 1999

Share Link: