2MBI100N-120 データシートの表示（PDF） - Fuji Electric
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2MBI100N-120 Datasheet PDF : 4 Pages
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1000
Switching Time vs. RG
VCC=600V, IC=100A, VGE=±15V, Tj=25°C
tOFF
tON
tr
tf
100
10
Gate Resistance : RG [Ω ]
Forward Current vs. Forward Voltage
VGE=0V
250
200
Tj=125°C 25°C
150
100
50
0
0
1
2
3
4
5
Forward Voltage : VF [V]
Transient Thermal Resistance
1
Diode
IGBT
0,1
0,01
0,001
0,001
0,01
0,1
1
Pulse Width : PW [s]
1000
800
600
400
200
0
0
100
Dynamic Input Characteristics
Tj=25°C
25
VCC=400V
600V 20
800V
15
10
5
400
800
Gate Charge : QG [nC]
1200 0
Reverse Recovery Characteristics
trr, Irr vs. IF
trr
125°C
trr
25°C
Irr
125°C
Irr
25°C
10
0
50
100
150
200
Forward Current : IF [A]
1000
Reversed Biased Safe Operating Area
+VGE=15V, -VGE<15V, Tj<125°C, RG>9.1Ω
800
600
SCSOA
(non-repetitive pulse)
400
200
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000 1200
Collector-Emitter Voltage : VCE [V]
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