2N3507AL データシートの表示（PDF） - Microsemi Corporation
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2N3507AL Datasheet PDF : 2 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 3.0Adc, VCE = 5Vdc
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 2Vdc
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
Collector-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
Base-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
Base-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
DYNAMIC CHARACTERISTICS
2N3506
2N3507
2N3506
2N3507
2N3506A
2N3507A
Symbol
hFE
hFE
hFE
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 20MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS (4)
Parameters / Test Conditions
Delay Time
IC = 1.5Adc, IB1 = 150mAdc
Rinse Time
IC = 1.5Adc, IB1 = 150mAdc
Storage Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
Symbol
|hfe|
Cobo
Cibo
Symbol
td
tr
ts
tf
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 For Additional Infornation.
T4-LDS-0016 Rev. 1 (072040)
Min.
25
20
25
17
25
17
0.8
Min.
3.0
Min.
Max.
Unit
0.5
Vdc
1.0
Vdc
1.5
Vdc
1.0
Vdc
1.3
Vdc
2.0
Vdc
Max.
Unit
15
40
pF
300
pF
Max.
Unit
15
ns
30
ns
55
ns
35
ns
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