2N5015/39S データシートの表示（PDF） - Solid State Devices, Inc.
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2N5015/39S Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
2N50 15 __ __
│ │ └ Screening 2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ Package
│
/39 = TO-39
│
/5 = TO-5
└ Family / Voltage 1000V
Maximum Ratings
Collector – Emitter Voltage (RBE= 1 kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector – Emitter Breakdown Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation @ TC = 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
2N5015
0.5 AMP, 1000 Volts
NPN Transistor
FEATURES:
BVCER 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
TX, TXV, and S-Level Screening Available
Symbol
VCER
VCBO
VEBO
BVCEO
IC
IB
PD
TOP, TSTG
RθJC
Value
1000
1000
5
450
0.5
250
2.0
20
-65 to +200
50 (typ 22)
Units
V
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
Notes:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
TO-39
TO-5
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC
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