2N5154 データシートの表示（PDF） - Microsemi Corporation

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コンポーネント説明

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2N5154

NPN POWER SILICON TRANSISTOR

Microsemi Corporation 

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

Devices

2N5152

2N5152L

2N5154

2N5154L

TECHNICAL DATA

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ TA = +250C(1)

@ TC = +250C(2)

VCEO

VCBO

VEBO

IC(3, 4)

PT

Operating & Storage Temperature Range

Tj, Tstg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Thermal Resistance, Junction-to-Case

RθJC

1) Derate linearly 5.7 mW/0C for TA > +250C

2) Derate linearly 66.7 mW/0C for TC > +250C

3) Derate linearly 80 mW/0C for TC > +250C

4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%

All Units

80

100

5.5

2.0

1.0

11.8

-65 to +200

Max.

15

Units

Vdc

Vdc

Vdc

Adc

W

W

°C

Unit

0C/W

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)

Characteristics

Symbol

Min.

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100 mAdc, IB = 0

Emitter-Base Cutoff Current

V(BR)CEO

80

VEB = 4.0 Vdc, IC = 0

IEBO

VEB = 5.5 Vdc, IC = 0

Collector-Emitter Cutoff Current

VCE = 60 Vdc, VBE = 0

ICES

VCE = 100 Vdc, VBE = 0

Collector-Base Cutoff Current

VCE = 40 Vdc, IB = 0

ICEO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Max.

1.0

1.0

1.0

1.0

50

TO- 5*

2N5152L, 2N5154L

2N5152, 2N5154

TO-39*

(TO-205AD)

*See appendix A for

package outline

Unit

Vdc

µAdc

mAdc

µAdc

mAdc

µAdc

120101

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