2N5295 データシートの表示（PDF） - Inchange Semiconductor

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2N5295

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5293 2N5295 2N5297

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N5293

70

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5295

IC=0.1A ;IB=0

40

V

2N5297

60

VCEsat

Collector-emitter

saturation voltage

2N5293

2N5295

2N5297

IC=0.5A;IB=0.05A

IC=1.0A;IB=0.1A

IC=1.5A;IB=0.15A

1.0

V

2N5293

VBE

Base-emitter on voltage 2N5295

IC=0.5A ; VCE=4V

IC=1.0A ; VCE=4V

1.1

1.3

V

2N5297

IC=1.5A ; VCE=4V

1.5

ICEV

ICER

IEBO

Collector cut-off current

2N5293/5297

VCE=65V;VBE=1.5V

TC=150℃

0.5

3.0

半导体2N5295

VCE=35V;VBE=1.5V

TC=150℃

2.0

5.0

固电 SEMICONDUCTOR Collector cut-off current

2N5293/5297

VCE=50V;RBE=100Ω

TC=150℃

0.5

2.0

2N5295

VEB=7V; IC=0

Emitter cut-off current

1.0

2N5293/5297 VEB=5V; IC=0

INCHANG 2N5293

IC=0.5A ; VCE=4V

30

120

mA

mA

mA

hFE

DC current gain

2N5295

IC=1.0A ; VCE=4V

2N5297

IC=1.5A ; VCE=4V

20

80

fT

Transition frequency

IC=0.2A ; VCE=4V

0.8

MHz

ton

Turn-on time

2N5293

2N5295

IC=0.5A;IB=0.05A;VCC=30V

IC=1.0A;IB=0.1A;VCC=30V

5.0 μs

2N5297

IC=1.5A;IB=0.15A;VCC=30V

toff

Turn-off time

2N5293

2N5295

IC=0.5A;IB=0.05A;VCC=30V

IC=1.0A;IB=0.1A;VCC=30V

15

μs

2N5297

IC=1.5A;IB=0.15A;VCC=30V

2

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