2N5458G データシートの表示（PDF） - ON Semiconductor

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2N5458G

JFETs − General Purpose

ON Semiconductor 

2N5457, 2N5458

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Gate −Source Breakdown Voltage

(IG = −10 mAdc, VDS = 0)

Gate Reverse Current

(VGS = −15 Vdc, VDS = 0)

(VGS = −15 Vdc, VDS = 0, TA = 100°C)

Gate−Source Cutoff Voltage

(VDS = 15 Vdc, iD = 10 nAdc)

2N5457

2N5458

Gate−Source Voltage

(VDS = 15 Vdc, iD = 100 mAdc)

(VDS = 15 Vdc, iD = 200 mAdc)

ON CHARACTERISTICS

2N5457

2N5458

Zero−Gate−Voltage Drain Current (Note 1)

(VDS = 15 Vdc, VGS = 0)

2N5457

2N5458

DYNAMIC CHARACTERISTICS

Forward Transfer Admittance (Note 1)

(VDS = 15 Vdc, VGS = 0, f = 1 kHz)

2N5457

2N5458

Output Admittance Common Source (Note 1)

(VDS = 15 Vdc, VGS = 0, f = 1 kHz)

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1 kHz)

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1 kHz)

1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.

Symbol

V(BR)GSS

IGSS

VGS(off)

VGS

IDSS

|Yfs|

|Yos|

Ciss

Crss

Min

Typ

Max

Unit

−25

−

−

Vdc

−

−

− 1.0

nAdc

−

−

−200

−0.5

−

−6.0

Vdc

−1.0

−

−7.0

−

−2.5

−

Vdc

−

−3.5

−

1.0

3.0

5.0

mAdc

2.0

6.0

9.0

1000

1500

3000

4000

5000

5500

mmhos

−

10

50

mmhos

−

4.5

7.0

pF

−

1.5

3.0

pF

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