2N5666S データシートの表示（PDF） - Semicoa Semiconductor
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2N5666S Datasheet PDF : 2 Pages
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Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5666SJ)
• JANTX level (2N5666SJX)
• JANTXV level (2N5666SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
RθJA
TJ
TSTG
2N5666S
Silicon NPN Transistor
Data Sheet
Applications
• General purpose high power switching
• Power Transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 9221
• Reference document:
MIL-PRF-19500/455
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
200
Volts
250
Volts
6
Volts
5
A
1.2
W
6.9
mW/°C
15
W
150
mW/°C
3.3
°C/W
-65 to +200
°C
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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