2N5666S データシートの表示（PDF） - Semicoa Semiconductor
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2N5666S Datasheet PDF : 2 Pages
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2N5666S
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 µA, RBE = 100 Ω
250
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10 µA
6
Volts
Collector-Base Cutoff Current
ICBO1 VCB = 200 Volts
100
nA
Collector-Emitter Cutoff Current
ICES1
ICES1
VCE = 200 Volts
VCE = 200 Volts, TA = 150°C
200
nA
100
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 0.5 A, VCE = 2 Volts
IC = 1 A, VCE = 5 Volts
IC = 3 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
TA = -55°C
IC = 3 A, IB = 300 mA
IC = 5 A, IB = 1 A
IC = 3 A, IB = 300 mA
IC = 5 A, IB = 1 A
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Typ
Max Units
40
40
120
15
5
15
1.2
Volts
1.5
0.4
Volts
1.0
Symbol
Test Conditions
Min
Typ
Max Units
|hFE|
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
2
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
7
120
pF
Switching Characteristics
Parameter
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
tON IC = 1 A, VCC = 100 Volts
tOFF IC = 1 A, VCC = 100 Volts
Min
Typ
Max Units
0.25
µs
1.5
µs
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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