2N6027 データシートの表示（PDF） - ON Semiconductor
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2N6027 Datasheet PDF : 6 Pages
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2N6027, 2N6028
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Fig. No.
Peak Current*
(VS = 10 Vdc, RG = 1 MW)
(VS = 10 Vdc, RG = 10 kW)
2N6027
2N6028
2N6027
2N6028
2,9,11
Offset Voltage*
(VS = 10 Vdc, RG = 1 MW)
(VS = 10 Vdc, RG = 10 kW)
Valley Current*
(VS = 10 Vdc, RG = 1 MW)
(VS = 10 Vdc, RG = 10 k W)
(VS = 10 Vdc, RG = 200 W)
2N6027
2N6028
(Both Types)
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
1
1,4,5
Gate to Anode Leakage Current*
−
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)
Gate to Cathode Leakage Current
−
(VS = 40 Vdc, Anode to Cathode Shorted)
Forward Voltage*
1,6
(IF = 50 mA Peak) (Note 4)
Peak Output Voltage*
3,7
(VG = 20 Vdc, CC = 0.2 mF)
Pulse Voltage Rise Time
3
(VB = 20 Vdc, CC = 0.2 mF)
*Indicates JEDEC Registered Data
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
Symbol
IP
VT
IV
IGAO
IGKS
VF
Vo
tr
Min Typ Max Unit
mA
− 1.25 2.0
− 0.08 0.15
−
4.0 5.0
− 0.70 1.0
V
0.2 0.70 1.6
0.2 0.50 0.6
0.2 0.35 0.6
mA
−
18
50
−
18
25
70 150
−
25 150
−
1.5
−
−
1.0
−
−
mA
nAdc
−
1.0 10
−
3.0
−
−
5.0 50 nAdc
−
0.8 1.5
V
6.0 11
−
V
−
40
80
ns
+VB
IA
IA A
R2
G
− VS =
R1
R1 + R2
VB
+
VAK
R1
VAK
K
RG =
R1 R2
R1 + R2
RG
VS
1A − Programmable Unijunction
with Program" Resistors
R1 and R2
1B − Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
VA
VS −VP
VT = VP − VS
VF
VV
IGAO
IP
IV
IF
IA
IC − Electrical Characteristics
Figure 1. Electrical Characterization
Adjust
for
Turn−on
Threshold
100 k
1.0%
−
IP (SENSE)
100 mV = 1.0 nA
+
2N5270
R
+VB
510 k
+V
16 k Vo
6.0 V
VB
RG = R/2
0.01 mF
VS = VB/2
CC
vo 27 k
Scope
(See Figure 1)
20 W
0.6 V
t
Put
tf
20 Under
R
Test
Figure 2. Peak Current (IP) Test Circuit
Figure 3. Vo and tr Test Circuit
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