2N5839 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2N5839 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5838 2N5839 2N5840
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5838
250
VCEO
Collector-emitter
sustaining voltage
2N5839
IC=0.1A ;IB=0
275
V
2N5840
350
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
0.8
V
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
1.0 mA
ICEV
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
1.0 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0 mA
2N5838
IC=3A ; VCE=3V
hFE
DC current gain
2N5839/5840 IC=2A ; VCE=3V
8
40
10
50
fT
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
5
MHz
JMnic
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