2N6251(2012) データシートの表示（PDF） - Comset Semiconductors

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2N6251
(Rev.:2012)

HIGH VOLTAGE SILICON POWER TRANSISTORS

Comset Semiconductors 

NPN 2N6249 – 2N6250 – 2N6251

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

VCER(SUS)

Collector-Emitter

Sustaining Voltage

IC=200 mA, IB=0

IC=0.2 A, RBE=50 Ω

2N6249 200 -

2N6250 275 -

2N6251 350 -

2N6249 225 -

2N6250 300 -

2N6251 375 -

-

-

V

-

-

-

V

-

VCE=150 V, IB=0

ICEO

Collector-Emitter Current VCE=225 V, IB=0

VCE=300 V, IB=0

2N6249

2N6250 -

-

5 mA

2N6251

VCE=200 V, VEB=-1.5 V

-

VCE=200 V, VEB=-1.5 V 2N6249

TC = 150°C

-

VCE=275 V, VEB=-1.5 V

-

-

5

- 10

-

5

ICEX

Collector Cutoff Current

VCE=275 V, VEB=-1.5 V 2N6250

TC = 150°C

-

-

10 mA

VCE=350 V, VEB=-1.5 V

-

-

5

VCE=350 V, VEB=-1.5 V 2N6251

TC = 150°C

-

- 10

IEBO

hFE

VCE(SAT)

VBE(SAT)

Is/b

fT

Emitter Cutoff Current

Dc Current Gain

Collector-Emitter

Saturation Voltage (*)

Base-Emitter Saturation

Voltage (*)

Second Breakdown

Collector Current With

Base Forward Biased

Transition Frequency

VBE=6 V, IC=0

IC=10 A, VCE=3 V

IC=10 A, IB=1 A

IC=10 A, IB=1.25 A

IC=10 A, IB=1.67 A

IC=10 A, IB=1 A

IC=10 A, IB=1.25 A

IC=10 A, IB=1.67 A

2N6249

2N6250 -

2N6251

2N6249 10

2N6250 8

2N6251 6

2N6249

2N6250 -

2N6251

2N6249

2N6250 -

2N6251

VCE=30 V

t=1 s, non-repetitive

5.8

VCE=10 V, IC=1 A, f = 1.0 MHz

2.5

-

1 mA

- 50 -

- 50

- 50

- 1.5 V

- 2.25 V

-

-

A

-

- MHz

20/11/2012

COMSET SEMICONDUCTORS

2|4

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