2N6249 データシートの表示（PDF） - Comset Semiconductors
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2N6249 Datasheet PDF : 3 Pages
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2N6249 – 2N6250 – 2N6251
IEBO
Emitter Cutoff Current
VBE=6.0 Vdc, IC=0
Ssecond Breakdown
Is/b
Collector Current with
base forward biased
VCE=30 Vdc
t=1.0S non-repetitive
Ssecond Breakdown
Es/b
Energy with base reverse IC= 10 A, VBE(off) = 4.0Vdc,
biased t=1.0S non-
L = 50 µH
repetitive
hFE
DC Current Gain
IC=10 Adc, VCE=3.0 Vdc
VCE(SAT)
VBE(SAT)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
IC=10 Adc, IB=1 Adc
IC=10 Adc, IB=1.25 Adc
IC=10 Adc, IB=1.67 Adc
IC=10 Adc, IB=1 Adc
IC=10 Adc, IB=1.25 Adc
IC=10 Adc, IB=1.67 Adc
(1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ).
2N6249
2N6250 -
2N6251
- 1.0 mAdc
2N6249 5.8 - -
2N6250 5.8 - - Vdc
2N6251 5.8 - -
2N6249 2.5 - -
2N6250 2.5 - - mJ
2N6251 2.5 - -
2N6249 10 - 50
2N6250 8.0 - 50 -
2N6251 6.0 - 50
2N6249 - - 1.5
2N6250 - - 1.5 Vdc
2N6251 - - 1.5
2N6249 - - 2.5
2N6250 - - 2.5 Vdc
2N6251 - - 2.5
Symbol
fT
tr
ts
tf
Ratings
Test Condition(s)
Current Gain – Bandwith
Product
VCE=10 Vdc, IC=1.0 Adc,
ftest = 1.0 Mhz
VCC= 200 Vdc, IC= 10 A, Duty Cycle <= 2.0% tp= 100 µs
Rise Time
IB1 = IB2=1.0 Adc
Storage Time
IB1 = IB2=1.25 Adc
Fall Time
IB1 = IB2=1.67 Adc
2N6259
2N6250
2N6251
Min Typ Mx Unit
2.5 - - MHz
- - 2.0
- - 3.5 µs
- - 1.0
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
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