2N6491(2002) データシートの表示（PDF） - ON Semiconductor
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2N6491 Datasheet PDF : 8 Pages
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2N6487 2N6488 2N6490 2N6491
VCC
+ 30 V
25 µs
+ 10 V
0
RC
SCOPE
RB
- 10 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
51
D1
-4V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
D1 MUST BE FAST RECOVERY TYPE, e.g.:
ą1N5825 USED ABOVE IB [ 100 mA
ąMSD6100 USED BELOW IB [ 100 mA
Figure 2. Switching Time Test Circuit
1000
500
tr
200
100
50
NPN
PNP
td @ VBE(off) [ 5.0 V
20
TC = 25°C
VCC = 30 V
10 IC/IB = 10
0.2
0.5
1.0
2.0
5.0
10 20
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01 SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZθJC (t) = r(t) RθJC
P(pk)
RθJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 4. Thermal Response
50 100 200
500 1.0 k
20
10
100 µs
5.0
500 µs
2.0
TJ = 150°C
1.0
SECOND BREAKDOWN LIMITED
1.0 ms
5.0 ms
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
CURVES APPLY BELOW RATED VCEO
0.2
2N6487, 2N6490
dc
0.1
2.0 4.0
2N6488, 2N6491
10
20
40 60 80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
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