2N6492 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2N6492 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6492
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·DARLINGTON
APPLICATIONS
·General-purpose power amplifier and
low frequency swithing applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
55
45
5
15
100
150
-65~200
UNIT
V
V
V
A
W
℃
℃
VALUE
1.75
UNIT
℃/W
Share Link: 