2N6493 データシートの表示（PDF） - Inchange Semiconductor
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2N6493 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA
VBEsat Base-emitter saturation voltage
IC=10A ;IB=100mA
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
ICEO
Collector cut-off current
VCE=50V; IB=0
ICEX
Collector cut-off current
VCE=100V; VBE(off)=-1.5V
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=4V
hFE-2
DC current gain
IC=15A ; VCE=4V
Product Specification
2N6493
MIN TYP. MAX UNIT
70
V
3
V
4
V
2.8
V
1.0 mA
0.5 mA
3.0 mA
500
100
2
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