2N6496 データシートの表示（PDF） - SavantIC Semiconductor
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2N6496 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6496
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=50mA ;IC=0
VCEsat Collector-emitter saturation voltge
IC=8A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
ICEO
Collector cut-off current
ICEV
Collector cut-off current
IEBO
Emitter cut-off current
VCE=90V; IB=0
VCE=130V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE
DC current gain
IC=8A ; VCE=2V
COB
Output capacitance
IE=0;VCB=10V;f=1MHz
MIN TYP. MAX UNIT
80
V
7
V
1.0
V
2.0
V
1.8
V
1.0
mA
2.0
5.0
mA
1.0
mA
12
100
400
pF
2
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