2N6559 データシートの表示（PDF） - Central Semiconductor

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2N6559

HIGH POWER NPN SILICON TRANSISTOR

Central Semiconductor 

2N6557

2N6558

2N6559

NPN SILICON

HIGH VOLTAGE TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6557 series

types are NPN silicon, triple diffused transistors

designed for video output and similar applications

where high breakdown voltage is required.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS: (TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

PD

TJ, Tstg

ΘJA

ΘJC

2N6557 2N6558 2N6559

250

300

350

250

300

350

6.0

0.5

0.7

0.25

2.0

10

-65 to +150

62.5

12.5

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N6557

2N6558

SYMBOL

TEST CONDITIONS

MIN MAX MIN MAX

ICBO

VCB=150V

- 200

--

ICBO

VCB=200V

--

- 200

ICBO

VCB=250V

--

--

IEBO

VEB=5.0V

- 100

- 100

BVCBO

lC=100μA

250 -

300 -

BVCEO

lC=1.0mA

250 -

300 -

BVEBO

lE=100μA

6.0 -

6.0 -

VCE(SAT)

lC=30mA, IB=3.0mA

- 0.6

- 0.6

VCE(SAT)

lC=50mA, IB=5.0mA

- 1.5

- 1.5

VBE(ON)

VCE=10V, IC=30mA

- 0.85

- 0.85

hFE

VCE=10V, IC=1.0mA

25 -

25 -

hFE

VCE=10V, IC=30mA

40 180 40 180

fT

VCE=20V, lC=10mA, f=20MHz

45 200

45 200

Cob

VCB=20V, lE=0, f=1.0MHz

- 3.0

- 3.0

2N6559

MIN MAX

--

--

- 200

- 100

350 -

350 -

6.0 -

- 0.6

- 1.5

- 0.85

25 -

40 180

45 200

- 3.0

UNITS

V

V

V

A

A

A

W

W

°C

°C/W

°C/W

UNITS

nA

nA

nA

nA

V

V

V

V

V

V

MHz

pF

R1 (23-January 2012)

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