2N6660(2001) データシートの表示（PDF） - Vishay Semiconductors
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2N6660 Datasheet PDF : 4 Pages
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2N6660, VQ1004J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
2.0
1.6
1.2
0.8
0.4
0
0
Ohmic Region Characteristics
VGS = 10 V
8V
7V
6V
5V
4V
3V
2V
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Output Characteristics for Low Gate Drive
100
VGS = 10 V
2.8 V
80
2.6 V
60
40
20
0
0
2.4 V
2.2 V
2.0 V
1.8 V
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
1.0
TJ = –55_C
25_C
0.8 VDS = 15 V
125_C
0.6
On-Resistance vs. Gate-to-Source Voltage
2.8
1.0 A
2.4
0.5 A
2.0
1.6
1.2
0.4
0.8
ID = 0.1 A
0.2
0.4
0
0
2.5
2
4
6
8
10
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.0
1.5
VGS = 10 V
0
0
2.25
2.00
1.75
1.50
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS = 10 V
I D= 1.0 A
0.2 A
1.0
1.25
1.00
0.5
0.75
0
0
0.4
0.8
1.2
1.6
2.0
ID – Drain Current (A)
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-3
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