2N7002F(2002) データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
2N7002F Datasheet PDF : 11 Pages
| |||
Philips Semiconductors
2N7002F
TrenchMOS™ Logic Level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 10 V
Tsp = 25 °C
VGS = 10 V; ID = 500 mA; Tj = 25
VGS = 4.5 V; ID = 75 mA; Tj = 25
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
peak gate-source voltage
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tj = 25 to 150 °C
Tj = 25 to 150 °C; RGS = 20 kΩ
tp ≤ 50 µs; pulsed; duty cycle = 25%
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tsp = 25 °C
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
Typ
Max Unit
-
60
V
-
475
mA
-
0.83 W
-
150
°C
1.7
2
Ω
2.25 4
Ω
Min
Max Unit
-
60
V
-
60
V
-
±30
V
-
±40
V
-
475
mA
-
300
mA
-
1.9
A
-
0.83 W
−65
+150 °C
−65
+150 °C
-
475
mA
-
1.9
A
9397 750 09096
Product data
Rev. 01 — 11 February 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 11
Share Link: 