2N7002F(2002) データシートの表示（PDF） - Philips Electronics
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2N7002F Datasheet PDF : 11 Pages
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Philips Semiconductors
2N7002F
TrenchMOS™ Logic Level FET
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
03aa25
40
40
0
0
50
100
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
150
200
Tsp (oC)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
0
0
50
100
150
200
Tsp (oC)
VGS ≥ 4.5 V
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ai11
10
ID
(A)
1
RDSon = VDS / ID
tp = 10 ms
100 ms
10-1
10-2
1
1 ms
10 ms
DC
100 ms
10
102
VDS (V)
Tsp = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09096
Product data
Rev. 01 — 11 February 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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