2N7002-G データシートの表示（PDF） - Supertex Inc
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2N7002-G Datasheet PDF : 5 Pages
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2N7002
Thermal Characteristics
Package
ID
(continuous)†
TO-236AB
115mA
Notes:
† ID (continuous) is limited by max rated Tj.
ID
(pulsed)
800mA
Power Dissipation
@TA = 25OC
0.36W
IDR†
115mA
IDRM
800mA
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max
Units Conditions
BVDSS Drain-to-Source breakdown voltage
60
-
-
V
VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage
1.0
-
2.5
V
VGS = VDS, ID = 250µA
∆VGS(th) Change in VGS(th) with temperature
-
-
-5.5 mV/OC VGS = VDS, ID = 250µA
IGSS
Gate body leakage current
-
-
±100
nA VGS = ±20V, VDS = 0V
IDSS
Zero Gate voltage drain current
-
-
1.0
VGS = 0V, VDS = Max rating
-
-
500
µA VGS = 0V, VDS = 0.8Max rating,
TA = 125OC
ID(ON) On-state Drain current
500
-
-
mA VGS = 10V, VDS = 25V
RDS(ON)
Static Drain-to-Source
on-state resistance
-
-
7.5
Ω
VGS = 5.0V, ID = 50mA
-
-
7.5
VGS = 10V, ID = 500mA
∆RDS(ON) Change in RDS(ON) with temperature
-
-
1.0 %/OC VGS = 10V, ID = 500mA
GFS
Forward transconductance
80
-
-
mmho VDS = 25V, ID = 500mA
CISS
Input capacitance
-
-
50
VGS = 0V,
COSS Common Source output capacitance
-
-
25
pF VDS = 25V,
CRSS Reverse transfer capacitance
-
-
5.0
f = 1.0MHz
t(ON)
t(OFF)
Turn-on time
Turn-off time
-
-
-
-
20
20
ns
VDD = 30V, ID = 200mA,
RGEN = 25Ω
VSD
Diode forward voltage drop
-
1.2
-
V
VGS = 0V, ISD = 200mA
trr
Reverse recovery time
-
400
-
ns
VGS = 0V, ISD = 800mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
10%
0V
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tf
VDD
OUTPUT
0V
10%
90%
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Doc.# DSFP-2N7002
C062813
Supertex inc.
2
www.supertex.com
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