2N7002E データシートの表示（PDF） - Vishay Semiconductors

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2N7002E

N-Channel 60 V (D-S) MOSFET

Vishay Semiconductors 

2N7002E

Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

Gate-Threshold Voltage

Gate-Body Leakage

VGS(th)

IGSS

VDS = VGS, ID = 250 µA

VDS = 0 V, VGS = ± 15 V

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

VDS = 60 V, VGS = 0 V , TJ = 125 °C

On-State Drain Currentb

Drain-Source On-Resistanceb

Forward Transconductanceb

ID(on)

RDS(on)

gfs

VGS = 10 V, VDS = 7.5 V

VGS = 4.5 V, VDS = 10 V

VGS = 10 V, ID = 250 mA

VGS = 4.5 V, ID = 200 mA

VDS = 15 V, ID = 200 mA

Diode Forward Voltage

Dynamica

VSD

IS = 200 mA, VGS = 0 V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = 10 V, VGS = 4.5 V

ID  250 mA

Qgd

Input Capacitance

Output Capacitance

Ciss

Coss

VDS = 5 V, VGS = 0 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switchinga, c

Turn-On Time

Turn-Off Time

td(on)

td(off)

VDD = 10 V, RL = 40 

ID  250 mA, VGEN = 10 V, Rg = 10 

Notes:

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: pulse width  300 µs duty cycle  2 %.

c. Switching time is essentially independent of operating temperature.

Limits

Min. Typ.a Max. Unit

60

68

V

1

2

2.5

± 10

nA

1

µA

500

800

1300

mA

500

700

1.2

3



1.8

4

600

mS

0.85

1.2

V

0.4

0.6

0.06

nC

0.06

21

7

pF

2.5

13

20

ns

18

25

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 70860

S11-0183-Rev. F, 07-Feb-11

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