2N7002E データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
2N7002E Datasheet PDF : 8 Pages
| |||
2N7002E
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
1.0
32
0.8
Ciss
24
0.6
VDS = 30 V
ID = 0.25 A
16
8
0
0
2
Coss
Crss
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Capacitance
0.4
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
Qg - Total Gate Charge (nC)
Gate Charge
1
TJ = 85 °C
25 °C
- 55 °C
0.1
0
0.2
0.4 0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70860.
www.vishay.com
4
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
Share Link: 