2N7081-220M-ISO データシートの表示（PDF） - Semelab - > TT Electronics plc
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2N7081-220M-ISO Datasheet PDF : 2 Pages
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2N7081–220M–ISO
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage VGS = 0
ID = 250µA
100
Gate Threshold Voltage
VDS = VGS
ID = 250µA
2
VGS(th) Gate – Body Leakage
VDS = 0
VGS = ±20V
IDSS Zero Gate Voltage Drain Current
VDS = 80V
VGS = 0
TJ = 125°C
ID(on) On–State Drain Current
VDS = 10V
VGS = 10V
11
Static Drain – Source On–State
RDS(on) Resistance
VGS = 10V
ID = 7.7A
TJ = 125°C
gfs
Forward Transconductance
VDS = 15V
IDS = 7.7A
4
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
600
Coss Output Capacitance
VDS = 25V
190
Crss Reverse Transfer Capacitance
f = 1MHz
35
td(on) Turn–On Delay Time
VDD = 50V
ID = 11A
7
tr
Rise Time
VGEN =10V
45
td(off) Turn–Off Delay Time
RL = 4.1Ω
30
tf
Fall Time
RG = 7.5Ω
10
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
IF =11
VGS = 0
trr
Reverse Recovery Time
IF = IS
100
Qrr
Reverse Recovery Charge
dIF/dt = 100A/µs
0.7
PACKAGE CHARACTERISTICS
RθJC
RθJA
RθCS
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Typ.
0.12
0.22
5
1
Max. Unit
V
4
V
±100 nA
25
µA
250
A
0.15
Ω
0.27
S
pF
ns
12
A
48
2.5
V
300 ns
µC
2.8
80 K/W
Semelab plc Telephone (01455) 556565
Fax (01455) 552612.
E-mail: sales@semelab.co.uk Web site: http://www.semelab.co.uk
Prelim. 6/98
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