2PC4617J データシートの表示（PDF） - Philips Electronics
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2PC4617J Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Preliminary specification
2PC4617J
FEATURES
• Power dissipation comparable to SOT23
• Low output capacitance
• Low saturation voltage VCEsat
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
APPLICATIONS
• General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.
handbook, halfpage
3
3
1
1
2
2
Top view
MAM410
MARKING
TYPE NUMBER
2PC4617JQ
2PC4617JR
2PC4617JS
MARKING CODE
ZQ
ZR
ZS
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
50
5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 04
2
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