Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=-10μA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA ; IC=0
VCEsat
Collector-emitter saturation voltage IC=-500mA; IB=B -50mA
VBEsat Base-emitter saturation voltage
IC=-500mA; IB=B -50mA
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-150mA ; VCE=-5V
fT
Transition frequency
IC=-50mA ; VCE=-10V
Product Specification
2SA1021
MIN TYP. MAX UNIT
-150
V
-150
V
-6
V
-0.5
V
-1.2
V
-1.0 μA
-1.0 μA
60
320
15
MHz
2