SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1021
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=8
V(BR)CBO Collector-base breakdown voltage
IC=-10µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA
VBEsat
Base-emitter saturation voltage
IC=-500mA; IB=-50mA
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
fT
Transition frequency
IC=-150mA ; VCE=-5V
IC=-50mA ; VCE=-10V
MIN TYP. MAX UNIT
-150
V
-150
V
-6
V
-0.5
V
-1.2
V
-1.0 µA
-1.0 µA
60
320
15
MHz
2