2SA1036 データシートの表示（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SA1036

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SA1 036

TRANSISTOR(PNP)

SOT-23

FEATURES

∙ Large IC. ICMax.= -500 mA

∙ Low VCE(sat). Ideal for low-voltage operation.

MARKING : HP, HQ, HR

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-40

-32

-5

-500

200

150

-55-150

Units

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=-100μA,IE=0

V(BR)CEO IC=-1mA,IB=0

V(BR)EBO IE=-100μA,IC=0

ICBO

VCB=-20V,IE=0

IEBO

VEB=-4V,IC=0

hFE

VCE=-3V,IC=-10mA

VCE(sat) IC=-100mA,IB=-10mA

fT

VCE=-5V,IC=-20mA,f=100MHz

Cob

VCB=-10V,IE=0,f=1MHz

MIN TYP MAX UNIT

-40

V

-32

V

-5

V

-1

μA

-1

μA

82

390

-0.4

V

200

MHz

7

pF

CLASSIFICATION OF hFE

Rank

Range

P

82 - 180

Q

120 - 270

R

180 - 390

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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