2SA1037 データシートの表示（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SA1037

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SA1 037

TRANSISTOR(PNP)

SOT-23

FEATURES

∙ Excellent hFE linearity.

∙ Complments the 2SC2412

MARKING : FQ, FR, FS

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-60

-50

-6

150

200

150

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Units

V

V

V

mA

mW

℃

℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=-50μA,IE=0

V(BR)CEO IC=-1mA,IB=0

V(BR)EBO IE=-50μA,IC=0

ICBO

VCB=-60V,IE=0

IEBO

VEB=-6V,IC=0

hFE

VCE=-6V,IC=-1mA

VCE(sat) IC=-50mA,IB=-5mA

fT

VCE=-12V,IC=-2mA,f=30MHz

Cob

VCB=-12V,IE=0,f=1MHz

MIN TYP MAX UNIT

-60

V

-50

V

-6

V

-0.1 μA

-0.1 μA

120

560

-0.5

V

140

MHz

4.0

5.0

pF

CLASSIFICATION OF hFE

Rank

Range

Q

120 - 270

R

180 - 390

S

270 - 560

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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