2SA1037 データシートの表示（PDF） - TY Semiconductor
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2SA1037 Datasheet PDF : 1 Pages
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Product specification
2SA1037
Features
Excellent hFE linearity.
PNP silicon transistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-6
V
IC
-0.15
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current Gain
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC=-50 A
VCEO IC=-1mA
VEBO IE=-50ìA
ICBO VCB=-60V
IEBO VEB=-6V
VCE(sat) IC/IB=-50mA/-5mA
hFE VCE=-6V, IC=-1mA
Cob VCB=-12V, IE=0A, f=1MHz
fT VCE=-12V, IE=2mA, f=30MHz
■ hFE Classification
Marking
Rank
hFE
FQ
Q
120～270
FR
R
180～390
FS
S
270～560
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1
A
-0.1
A
-0.5 V
120
560
4.0 5.0 pF
140
MHz
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